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2SB1205T-TL-E

Part No 2SB1205T-TL-E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 5A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 20V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 60mA, 3A
Current - Collector Cutoff (Maximum) 500nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 200 @ 500mA, 2V
Power - Max 1W
Frequency - Transition 320MHz
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Package 2-TP-FA
Win Source Part Number 762485-2SB1205T-TL-E
Family Name 2SB1205T
Introduction Date November 28, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2023
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1205T-TL-E CAD Model

Description

ON Semiconductor 2SB1205T-TL-E PNP Transistor

The ON Semiconductor 2SB1205T-TL-E is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This semiconductor device is a testament to ON Semiconductor's commitment to providing high-quality components for a wide range of electronic circuits. The 2SB1205T-TL-E is housed in a compact and efficient package, making it suitable for use in space-constrained applications.

Key Features

  • Transistor Type: The 2SB1205T-TL-E is a PNP transistor, which means it is designed to allow current flow when a small negative voltage is applied to its base terminal.
  • Voltage Ratings: It features a collector-base voltage (VCBO) of -50V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V, providing a good range of operation for various applications.
  • Current Capacity: The transistor can handle a continuous collector current (IC) of up to -2A, making it capable of driving moderate loads.
  • Power Dissipation: With a power dissipation (PD) of 1W, it can handle a fair amount of power, ensuring stability in operation.
  • High Transition Frequency: It boasts a high transition frequency (ft) of 120MHz, which is ideal for applications requiring fast switching and accurate amplification at higher frequencies.
  • Package: Enclosed in a small surface-mount package (TP-FA), the 2SB1205T-TL-E is optimized for automated assembly processes and is suitable for high-density PCB designs.

Applications

The 2SB1205T-TL-E is versatile and can be used in a variety of electronic circuits. It is commonly found in:

  • Audio amplifiers and pre-amplifiers
  • Signal processing circuits
  • Power management systems
  • Switching applications
  • Driver stages in hi-fi systems

ON Semiconductor's 2SB1205T-TL-E PNP transistor is a reliable choice for designers and engineers looking for a general-purpose transistor that combines performance with a compact footprint. Whether for prototyping or mass production, this component is engineered to meet the needs of a broad spectrum of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1746 $58.4910
810+ $0.1434 $116.1540
1,250+ $0.1388 $173.5000
1,720+ $0.1344 $231.1680
2,225+ $0.1300 $289.2500
2,980+ $0.1164 $346.8720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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