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2N7002LT1H

Part No 2N7002LT1H
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Small Signal MOSFET | MOSFET N-CH 60V SOT-23
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 115mA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Maximum) at Id, Vgs 7.5Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 50pF at 25V
Power Dissipation (Maximum) 225mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23-3 (TO-236)
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1124243-2N7002LT1H
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N7002LT1H CAD Model

Description

Product Overview: 2N7002LT1H - ON Semiconductor

The 2N7002LT1H is a high-performance, small-signal N-Channel MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the stringent requirements of modern electronic circuits, offering high-speed switching, low on-resistance, and a compact form factor. It is widely used in power management applications, including load switch, power conversion, and motor control in consumer electronics, automotive, and industrial systems.

Key Features

  • Voltage Rating: The device can handle a maximum drain-source voltage (V<sub>DS) of 60V, which makes it suitable for a variety of mid-voltage applications.
  • Current Capacity: It offers a continuous drain current (I<sub>D) of 115 mA, with the ability to handle pulse currents significantly higher, ensuring reliable operation under various conditions.
  • Low On-Resistance: With an R<sub>DS(on) as low as 7.5Ω at V<sub>GS = 10 V, this MOSFET provides efficient power handling with minimal losses, making it ideal for power-sensitive designs.
  • Fast Switching Speed: The device features fast switching speed, which is critical for reducing switching losses and improving efficiency in high-frequency applications.
  • Surface Mount Package: Packaged in a small SOT-23 surface-mount package, the 2N7002LT1H is optimized for space-constrained applications.
  • ESD Protection: It includes built-in electrostatic discharge (ESD) protection, safeguarding the device from unexpected voltage spikes during handling and operation.

Applications

The 2N7002LT1H is versatile and can be used in a wide range of applications, including:

  • DC/DC Converters
  • Power Management Circuits
  • Battery Powered Devices
  • Load Switches
  • Motor Control Systems
  • Switching Circuits

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The 2N7002LT1H is manufactured to meet the highest industry standards for performance and reliability. It is designed to withstand harsh environments and is compliant with RoHS directives, making it an environmentally friendly choice for electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5571 $50.1390
220+ $0.4572 $100.5840
340+ $0.4429 $150.5860
470+ $0.4286 $201.4420
605+ $0.4143 $250.6515
810+ $0.3714 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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