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2N5655

Part No 2N5655
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description POWER TRANSISTORS NPN SILICON | TRANS NPN 250V 0.5A TO225AA
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) at Ib, Ic 10V at 100mA, 500mA
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 30 at 100mA, 10mV
Maximum Power 20W
Frequency - Transition 10MHz
Temperature Range - Operating -65°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Family Part Number 2N5655
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Win Source Part Number 1123989-2N5655
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5655 CAD Model

Description

ON Semiconductor 2N5655 NPN Power Transistor

The 2N5655 is a high-power NPN bipolar transistor manufactured by ON Semiconductor, designed for a wide range of applications requiring high voltage and high current capabilities. This versatile component is widely used in power regulation, amplification, and switching applications where performance and reliability are critical.

Key Features:

  • High Voltage Capability: The 2N5655 is capable of handling high voltage operations, making it suitable for industrial and commercial power applications.
  • High Current Handling: This transistor can handle significant current loads, ensuring reliable performance in demanding situations.
  • TO-3 Package: The robust TO-3 metal case offers superior heat dissipation characteristics, which is essential for maintaining stability and extending the life of the transistor in high-power applications.
  • Low Saturation Voltage: The low VCE(sat) allows for efficient operation, minimizing power loss and improving overall system efficiency.

Applications:

  • Power supply regulators
  • Motor controls
  • Audio amplifiers
  • Switching circuits
  • High-power inverters

Specifications:

Parameter Value
Collector-Emitter Voltage (VCEO) 60V
Collector Current (IC) 15A
Power Dissipation (PD) 115W
Operating Junction Temperature (TJ) -65 to +200°C

The 2N5655 NPN transistor by ON Semiconductor is a reliable choice for designers and engineers looking for a component that offers both high power handling and efficiency. With its robust design and versatile application range, it stands as a solid choice for various high-performance power solutions.

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