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PMEG2010ET/B

Part No PMEG2010ET/B
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Diodes,Rectifiers - Single
Manufacturer NXP
Win Source Part Number 350721-PMEG2010ET/B
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PMEG2010ET/B CAD Model

Description

The PMEG2010ET/B is a highly efficient, low voltage, Schottky barrier rectifier diode designed and manufactured by NXP Semiconductors. This diode is specifically engineered for applications requiring a combination of low forward voltage drop and high forward current capability. With its optimized performance and compact form factor, the PMEG2010ET/B is an ideal choice for a variety of power management applications.

Key Features

  • Low Forward Voltage Drop: The PMEG2010ET/B boasts a low forward voltage drop, which enhances overall system efficiency by minimizing power loss during conduction.
  • High Forward Current: With a high average forward current rating, this diode is capable of handling significant current loads, making it suitable for high-density power applications.
  • Low Reverse Leakage Current: The device exhibits low reverse leakage current, ensuring minimal power loss when the diode is in the blocking state and contributing to the overall energy efficiency of the system.
  • Surface-Mount Package: Packaged in a small, surface-mount SOD-523 package, the PMEG2010ET/B saves valuable board space and is ideal for space-constrained applications.
  • High Junction Temperature: The diode can operate at a high junction temperature, providing reliable performance under a wide range of thermal conditions.

Applications

The PMEG2010ET/B is suitable for a diverse set of applications, including but not limited to:

  • Switched Mode Power Supplies (SMPS)
  • DC-DC converters
  • Load switch applications
  • Power management systems
  • Reverse polarity protection circuits
  • High-frequency rectification

Technical Specifications

The PMEG2010ET/B offers a range of technical specifications that make it a robust choice for high-efficiency power applications:

  • Forward Current (IF): 1 A
  • Reverse Voltage (VR): 20 V
  • Forward Voltage Drop (VF) at IF: Typically 0.37 V at 1 A
  • Reverse Current (IR) at VR: Typically 15 µA at 20 V
  • Operating Junction Temperature Range: -55°C to +150°C

With its performance characteristics and package efficiency, the PMEG2010ET/B from NXP is an excellent choice for designers looking to optimize their power circuits for both performance and size.

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Pricing & Ordering

Quantity Unit Price Ext. Price
620+ $0.0938 $58.1560
1,500+ $0.0771 $115.6500
2,325+ $0.0746 $173.4450
3,200+ $0.0722 $231.0400
4,140+ $0.0698 $288.9720
5,540+ $0.0626 $346.8040
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 2,999 pieces
MOQ: 620 pcs
Order Increment : 1 pcs
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