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PBSS5350D/DG+115

Part No PBSS5350D/DG+115
Manufacturer NXP / Nexperia
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 0839+
Reference case SMD
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 755524-PBSS5350D/DG+115
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PBSS5350D/DG+115 CAD Model

Description

The NXP PBSS5350D/DG+115 is a high-performance NPN transistor designed to deliver superior switching performance and high energy efficiency in a compact package. This product is part of NXP's portfolio of low VCESAT (Collector-Emitter Saturation Voltage) Bipolar Junction Transistors (BJTs), which are optimized for low voltage, high-speed switching applications commonly found in modern electronic circuits.

Key Features

  • Low Collector-Emitter Saturation Voltage: The transistor features a low VCESAT which minimizes power loss during switching, making it ideal for power-sensitive applications.
  • High Collector Current: With a maximum collector current of 5 A, this transistor can handle high current loads, making it suitable for power regulation and amplification purposes.
  • High Efficiency: The high current gain bandwidth product ensures efficient operation at higher frequencies, which is critical for minimizing transition times and reducing energy waste.
  • Robust Thermal Performance: The PBSS5350D/DG+115 is designed to operate reliably over a wide temperature range, ensuring stability and longevity in various operating conditions.
  • Small Package Size: The device comes in a small, flat SOT-23 surface-mount package, which is ideal for space-constrained applications.

Applications

The versatility of the NXP PBSS5350D/DG+115 makes it suitable for a wide range of applications, including:

  • DC-DC converters
  • Power management circuits
  • Motor control systems
  • LED drivers
  • Charge pumps
  • Switching regulators

Product Specifications

Parameter Value
Configuration Single NPN
Collector-Emitter Voltage VCEO 50 V
Collector Current IC 5 A
Power Dissipation PD 1.25 W
Collector-Emitter Saturation Voltage VCESAT Typically 115 mV at 5 A
DC Current Gain hFE 100 to 250 at 500 mA VCE
Operating Temperature Range -65°C to +150°C

For detailed information and data sheets, customers are encouraged to visit the NXP official website or contact their sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0730 $59.0150
135+ $0.8801 $118.8135
205+ $0.8524 $174.7420
285+ $0.8247 $235.0395
365+ $0.7981 $291.3065
485+ $0.7149 $346.7265
!
Prices are subject to market and will be confirmed after the order is placed.
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Availability: 16,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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