Product Overview: BUK216-50Y,118 - NXP Semiconductors

The BUK216-50Y,118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This FET is specifically engineered for automotive applications and power management tasks, offering a balance of low on-state resistance (R_DS(on)) and high switching performance.

Key Features

• Device Type: Standard level N-channel MOSFET
• Package: DPAK (TO-252) - a surface-mount, plastic encapsulated package that ensures a compact footprint and robust performance.
• Drain-Source Voltage (V_DS): 50V - provides a good margin for off-state voltages in various applications.
• Continuous Drain Current (I_D): Up to 75A - suitable for high current applications.
• On-State Resistance (R_DS(on)): Low - minimizes conduction losses and improves efficiency.
• Gate-Source Voltage (V_GS): ±20V - offers a wide range for gate driving voltages.
• Standard Level Gate Drive: Makes it compatible with a variety of drive circuits.
• Fast Switching Performance: Ensures efficient operation in switching applications.
• Automotive Grade: Qualified according to AEC-Q101 standards for high reliability.

Applications

The BUK216-50Y,118 MOSFET is ideal for a wide range of applications, particularly in the automotive sector. Its robust design and high-current handling capability make it suitable for use in:

• Motor drives
• Power supply circuits
• DC-DC converters
• Load switches
• Battery management systems
• LED lighting systems

Quality and Reliability

NXP Semiconductors is known for their commitment to quality and reliability, and the BUK216-50Y,118 is no exception. It is produced using state-of-the-art manufacturing processes, ensuring high durability and performance consistency for automotive and industrial environments.