Product Overview: BUK129-50DL,118 by NXP Semiconductors

The BUK129-50DL,118 is a high-performance, N-channel TrenchMOS™ standard level Field-Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is engineered to deliver efficient power conversion and control in a wide range of applications. Its standard level gate drive makes it suitable for various switching applications.

Key Features

• Device Type: Power MOSFET
• Channel Type: N-Channel
• Drain-Source Voltage (V_DS): 50V
• Continuous Drain Current (I_D): 75A
• R_DS(on): Very low on-state resistance of 8.7 mΩ typical at V_GS = 10V, providing high efficiency and reduced heat dissipation.
• Gate Charge (Q_g): Low gate charge to enhance switching speed.
• Package: D2PAK (TO-263), a surface mount package that facilitates efficient heat dissipation and space-saving on PCBs.

Applications

The BUK129-50DL,118 is versatile and can be used in a variety of applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Automotive applications
• Switching regulators
• Power supplies

Quality and Reliability

As with all NXP products, the BUK129-50DL,118 is manufactured to the highest quality standards. It features a robust and reliable design that ensures long-term performance in demanding environments. The device is also AEC-Q101 qualified, making it suitable for automotive applications where reliability is critical.

Environmental Compliance

NXP Semiconductors is committed to environmental sustainability. The BUK129-50DL,118 is compliant with RoHS regulations, ensuring that it is free from harmful substances. This commitment extends to providing products that are designed for energy efficiency, contributing to the reduction of carbon footprint in electronic devices.

Overall, the BUK129-50DL,118 MOSFET from NXP Semiconductors represents a combination of performance, efficiency, and reliability, making it an excellent choice for designers looking to optimize their power management systems.