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BLF0810-90

Part No BLF0810-90
Manufacturer NXP / Nexperia
Catalog END - OF - LIFE
Description Base station LDMOS transistors
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer NXP
Win Source Part Number 1153664-BLF0810-90
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF0810-90 CAD Model

Description

The BLF0810-90 is a cutting-edge RF power transistor from NXP Semiconductors, designed to deliver exceptional performance for a wide range of applications. This product is part of NXP's LDMOS (Laterally Diffused Metal Oxide Semiconductor) portfolio, renowned for its high efficiency, reliability, and thermal stability. The BLF0810-90 is specifically engineered to meet the demands of high-power amplifiers in broadcast, industrial, medical, and RF energy applications.

Key Features

  • Frequency Range: The BLF0810-90 operates efficiently within the 470 MHz to 860 MHz frequency range, making it ideal for UHF applications.
  • Power Output: It boasts an impressive power output of 90 Watts, ensuring robust signal amplification for a variety of uses.
  • Gain: With a high gain of 21 dB, this transistor amplifies RF signals effectively, maintaining clarity and strength.
  • Efficiency: The device offers a high drain efficiency of 28%, minimizing energy loss and heat generation during operation.
  • Thermal Performance: The BLF0810-90 is encapsulated in a ceramic package that provides excellent thermal resistance, ensuring stable performance even under high-temperature conditions.

Applications

The BLF0810-90 is versatile and can be used in a variety of applications:

  • Terrestrial and digital broadcast transmitters
  • Industrial heating and plasma generation
  • Medical applications such as MRI and RF ablation
  • RF cooking and defrosting
  • Scientific applications in particle accelerators and fusion research

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality products, and the BLF0810-90 is no exception. It is manufactured using NXP's advanced LDMOS technology, ensuring superior performance and longevity. Each unit undergoes rigorous testing and quality assurance processes to guarantee that it meets the highest industry standards.

Support and Resources

Customers can access comprehensive technical support and resources for the BLF0810-90, including datasheets, application notes, and reference designs, directly from NXP's website. This ensures a smooth integration of the product into existing systems and facilitates the design of new applications leveraging this powerful RF transistor.

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