The NXP BAS85T1 is a high-performance, surface-mount Schottky barrier diode designed for applications requiring fast switching and low forward voltage drop. This diode is housed in a compact SOD-123 package, making it suitable for high-density circuit board designs.
Key Features
- Low Forward Voltage Drop: The BAS85T1 offers a low forward voltage drop, typically around 0.38V at IF=10mA, which enhances system efficiency by reducing power losses during operation.
- Fast Switching Speed: With its Schottky barrier design, this diode provides fast switching capabilities that are essential for high-frequency applications.
- Low Capacitance: The device features low diode capacitance, which is beneficial for high-speed switching and reduces noise in the circuit.
- Surface-Mount Package: The small SOD-123 package is ideal for space-constrained applications and allows for automated assembly processes.
- High Surge Current Capability: This diode can handle high surge currents, providing robust performance during transient conditions.
Applications
The BAS85T1 is versatile and can be used in a variety of applications, including:
- Power supply circuits
- DC-DC converters
- Reverse polarity protection
- Switching power supplies
- High-frequency rectification
- Automotive applications
Electrical Characteristics
| Parameter |
Conditions |
Min |
Typ |
Max |
| Forward Voltage (VF) |
IF=10mA |
- |
0.38V |
- |
| Reverse Current (IR) |
VR=25V |
- |
- |
2µA |
| Diode Capacitance (CD) |
VR=1V, f=1MHz |
- |
10pF |
- |
Quality and Reliability
NXP is committed to delivering high-quality and reliable components. The BAS85T1 diode is designed to meet stringent industry standards, ensuring performance and durability for your electronic designs.