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BAS40/DG/B2

Part No BAS40/DG/B2
Manufacturer NXP / Nexperia
Catalog Diodes, Rectifiers - Arrays
Description GENERAL-PURPOSE SCHOTTKY DIODES
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Diodes,Rectifiers - Arrays
Manufacturer NXP
Win Source Part Number 231401-BAS40/DG/B2
Popularity Low
Supply and Demand Status Balance
Country of Origin China, Malaysia
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian BAS40/DG/B2 CAD Model

Description

The BAS40/DG/B2 is a high-performance Schottky barrier diode designed and manufactured by NXP Semiconductors, a leader in the electronics industry. This small-signal diode is optimized for low voltage, high-speed switching applications, making it an ideal choice for a variety of compact and energy-efficient electronic circuits.

Key Features

  • Low Forward Voltage Drop: The diode features a low forward voltage drop, which enhances its efficiency in applications by minimizing power loss during conduction.
  • High-Speed Switching: With its fast switching capability, the BAS40/DG/B2 is suitable for high-frequency operations, contributing to the improved performance of the overall circuit.
  • Surface-Mount Package: The device comes in a small SOT-23 package, which is ideal for automated assembly processes and helps save space on printed circuit boards (PCBs).
  • Low Capacitance: The diode's low capacitance is beneficial for high-speed applications as it allows for faster signal processing and reduced signal distortion.
  • Lead-Free and RoHS Compliant: In line with environmental regulations, the BAS40/DG/B2 is lead-free and complies with the Restriction of Hazardous Substances (RoHS) directive, making it a responsible choice for eco-friendly electronics design.

Applications

The BAS40/DG/B2 is versatile and can be used in various applications, including:

  • High-speed switching circuits
  • Power management systems
  • Protection circuits
  • Voltage clamping
  • Reverse polarity protection
  • Logic circuits

Technical Specifications

Some of the key technical specifications of the BAS40/DG/B2 include:

  • Maximum Repetitive Reverse Voltage: 40V
  • Forward Continuous Current: 200mA
  • Power Dissipation: 250mW
  • Operating Junction Temperature Range: -55°C to +150°C

In conclusion, the BAS40/DG/B2 from NXP Semiconductors is a reliable and efficient choice for designers looking to incorporate a high-speed Schottky diode into their electronic applications. Its compact footprint, high-speed switching capabilities, and compliance with environmental standards make it a highly attractive component for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9762 $59.2860
75+ $1.6216 $121.6200
115+ $1.5708 $180.6420
155+ $1.5200 $235.6000
200+ $1.4692 $293.8400
265+ $1.3179 $349.2435
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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