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2PB709A

Part No 2PB709A
Manufacturer NXP / Nexperia
Catalog Hard To Find
Description PNP general purpose transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1124292-2PB709A
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2PB709A CAD Model

Description

The 2PB709A is a high-performance PNP bipolar junction transistor (BJT) from NXP Semiconductors, designed to deliver reliable and efficient performance for a wide range of electronic applications. This component is well-suited for use in amplification and switching applications where moderate power handling and amplification are required.

Key Features

  • PNP Bipolar Technology: The 2PB709A utilizes PNP transistor technology, making it suitable for use in negative ground circuit configurations and providing complementary functions to NPN transistors.
  • High Current Gain: With its high current gain (hFE), the 2PB709A ensures efficient current amplification, making it ideal for various signal amplification applications.
  • Low Voltage Operation: This transistor is designed for low voltage operations, which makes it a great choice for battery-powered devices and low-power circuits.
  • Compact SOT23 Package: Enclosed in a small SOT23 package, the 2PB709A is optimized for space-constrained applications, allowing for high-density PCB layouts.

Applications

The versatile 2PB709A transistor can be implemented in a broad range of electronic circuits. Some common applications include:

  • Audio amplifiers and preamplifiers
  • Signal processing circuits
  • Power management modules
  • Switching circuits and relay drivers
  • Consumer electronics

Performance Specifications

The NXP 2PB709A transistor boasts impressive specifications that ensure its performance in various applications:

  • Collector-Emitter Voltage (VCEO): The maximum voltage that can be applied from collector to emitter without causing damage.
  • Collector Current (IC): The maximum continuous current that can flow through the collector.
  • Power Dissipation (PD): The amount of power the transistor can dissipate without exceeding its maximum operating temperature.

For detailed specifications, designers and engineers should consult the datasheet provided by NXP Semiconductors. The 2PB709A is a testament to NXP's commitment to providing high-quality, reliable semiconductor products to the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,385+ $0.0243 $57.9555
5,885+ $0.0196 $115.3460
8,825+ $0.0196 $172.9700
12,500+ $0.0185 $231.2500
15,625+ $0.0185 $289.0625
21,430+ $0.0162 $347.1660
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 21,465 pieces
MOQ: 2385 pcs
Order Increment : 1 pcs
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