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Same model may have multiple batches, images only for reference.
PDTC114EU,135 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PDTC114EU,135

Part No PDTC114EU,135
Manufacturer Nexperia USA Inc.
Catalog RF Transistors (BJT)
Description TRANS PREBIAS NPN 200MW SOT323 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SOT-323
Datasheet
PDTC114EU,135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA
Power - Max 200 mW
Mounting SMD (SMT)
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number PDTC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1727-8523-1,1727-8523-2,934044140135,PDTC114EU,135-ND,1727-8523-6
Standard Package 10,000
Win Source Part Number 1128142-PDTC114EU,135
Ultra Librarian 3D Model Ultra Librarian PDTC114EU,135 CAD Model

Description

The Nexperia USA Inc. PDTC114EU,135 is a pre-biased NPN transistor with a package/case of SC-70, SOT-323.

  • Mounting Type: surface mount
  • Power Dissipation: 200 mW
  • Voltage - Collector-Emitter Breakdown (Max): 50 V
  • Current - Collector (Ic) (Max): 100 mA
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500μA, 10mA
  • Current - Collector Cutoff (Max): 1μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Alternative Part (Cross-Reference): PDTC114EU 135 and PDTC114EU135

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