The UPD4364G-12L is a 65,536-bit high-speed static RAM (SRAM) manufactured by NEC. It is organized as 8,192 words by 8 bits. This SRAM is designed for applications requiring fast access times and low power consumption.

Applications:

• High-speed cache memory
• Buffer memory
• Main memory for embedded systems
• Data acquisition systems
• Industrial control equipment

Features:

• High-speed access time: 12 ns
• Low power consumption
• Single 5V power supply
• Fully static operation: No clock or refresh required
• TTL compatible inputs and outputs
• Three-state outputs
• Available in various package options, including DIP and SOJ

Benefits:

• Improved system performance due to fast access times
• Reduced power consumption, leading to longer battery life in portable applications
• Simplified system design due to fully static operation
• Easy integration with other TTL compatible devices
• Flexibility in packaging options to suit different application requirements

Additional Details:

The UPD4364G-12L SRAM utilizes advanced CMOS technology to achieve its high speed and low power characteristics. Its fully static operation eliminates the need for external clocks or refresh circuits, simplifying system design and reducing overall system cost. The device is available in various package options, allowing designers to choose the most suitable package for their specific application. The TTL compatible inputs and outputs ensure easy interfacing with other TTL logic devices. The three-state outputs allow for easy memory expansion and bus sharing.

Operating Temperature: 0°C to +70°C

Data Retention Voltage: 2V (minimum)

Standby Current: Typically 20mA, Max 40mA