The NEC UPD43256C-10L is a high-speed, low-power static random-access memory (SRAM) chip. This SRAM is designed for applications requiring fast access times and low power consumption. It offers a capacity of 256 kbit (32k x 8 bits), making it suitable for various memory storage needs.

Applications

• Cache memory in microprocessors
• Buffer memory in data acquisition systems
• Image processing systems
• Digital signal processing (DSP) applications
• Embedded systems
• Industrial control systems

Features

• Fast access time (10ns)
• Low power consumption
• 32k x 8-bit organization
• TTL compatible inputs and outputs
• Single 5V power supply
• Three-state outputs
• Available in DIP package

Benefits

• Enables high-speed data processing
• Reduces overall system power consumption
• Provides ample storage for temporary data
• Easy to interface with standard logic circuits
• Simplifies system design with single power supply requirement
• Allows for easy memory expansion
• Facilitates prototyping and development with DIP package

Additional Details

The UPD43256C-10L is fabricated using advanced CMOS technology, which contributes to its low power consumption and high speed. It is available in a standard DIP (Dual In-line Package), which simplifies prototyping and board assembly. This SRAM supports TTL (Transistor-Transistor Logic) compatible inputs and outputs, making it easy to interface with a wide range of microprocessors and digital logic circuits. The typical operating current and standby current should be verified via the manufacturer's datasheet. Its fast access time ensures quick retrieval and storage of data, enhancing the performance of systems that rely on frequent memory accesses. The three-state outputs allow for easy memory expansion and sharing of memory resources. The reliable performance and wide availability of this SRAM make it a popular choice for various embedded and industrial applications. The detailed timing diagrams and voltage level requirements are available in the device datasheet.