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UPA1902TE

Part No UPA1902TE
Manufacturer NEC
Catalog Electronic Wholesale
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Sample
Rohs State rohs
ECAD Module
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Manufacturer NEC
Win Source Part Number 1277472-UPA1902TE
Manufacturer Homepage www.nec.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian UPA1902TE CAD Model

Description

The UPA1902TE is a P-channel Power MOSFET manufactured by NEC. This MOSFET is designed for high-speed switching applications and features low on-state resistance, making it suitable for efficient power management circuits.

Applications:

  • DC-DC converters: Used in step-up and step-down converters to regulate voltage levels.
  • Load switches: Provides efficient power control in various electronic devices.
  • Power management in portable devices: Optimizes battery life in smartphones, tablets, and laptops.
  • Motor control circuits: Enables efficient control of small DC motors.
  • Backlight inverters: Driving the backlight of LCD screens.

Features:

  • Low on-state resistance (RDS(on)): Minimizes power loss and improves efficiency.
  • Low gate charge (Qg): Enables fast switching speeds.
  • Surface mount package: Allows for compact circuit designs.
  • P-channel MOSFET: Provides a convenient configuration for certain power supply topologies.
  • High avalanche energy: Enhances robustness and reliability.

Benefits:

  • High efficiency: Low RDS(on) reduces power dissipation, leading to improved efficiency.
  • Fast switching: Low gate charge allows for high-frequency operation.
  • Compact design: Surface mount package minimizes board space requirements.
  • Improved thermal performance: Low RDS(on) reduces heat generation.
  • Enhanced reliability: High avalanche energy provides protection against voltage spikes.

Additional Details:

The UPA1902TE is typically available in a small surface mount package such as a SOT-23 or similar. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). It is crucial to adhere to these maximum ratings to ensure reliable operation and prevent damage to the MOSFET. This device is suitable for low to medium power applications where efficiency and size are critical considerations. Applications should be carefully evaluated to ensure that the device's thermal limits are not exceeded, potentially requiring heat sinking or other thermal management techniques.

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