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RD30M-T2B/JM

Part No RD30M-T2B/JM
Manufacturer NEC
Catalog HOT - SALES and EOL Components (Q - R)
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Manufacturer NEC
Win Source Part Number 292008-RD30M-T2B/JM
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RD30M-T2B/JM CAD Model

Description

The RD30M-T2B/JM is a UHF power MOS FET transistor produced by NEC, intended for use in land mobile radio applications operating in the 800 MHz band. This transistor is designed to deliver a high level of RF power while maintaining excellent efficiency and reliability, making it ideal for use in demanding wireless communication systems.

Applications:

  • Land Mobile Radio (LMR) systems
  • 800 MHz band communication devices
  • UHF transmitters
  • Base stations
  • Repeaters

Features:

  • High power output: Provides significant RF power for extended communication range.
  • High efficiency: Minimizes power consumption and heat dissipation.
  • High gain: Offers strong signal amplification.
  • Excellent linearity: Ensures low distortion and clean signal transmission.
  • Designed for 800 MHz operation: Optimized for performance within the specified frequency band.
  • MOS FET technology: Provides ruggedness and reliability compared to bipolar transistors.
  • Compact size: Facilitates easy integration into various system designs.

Benefits:

  • Extended communication range: High power output enables reliable communication over greater distances.
  • Reduced power consumption: High efficiency minimizes energy waste and operational costs.
  • Improved signal quality: Excellent linearity ensures clear and distortion-free communication.
  • Enhanced system reliability: MOS FET technology provides robust performance in demanding environments.
  • Simplified system design: Compact size and ease of integration streamline the development process.

Additional Details:

The RD30M-T2B/JM transistor utilizes advanced MOS FET technology to achieve high power amplification with exceptional efficiency. Its design is specifically tailored for use in UHF land mobile radio applications, ensuring optimal performance within the 800 MHz frequency band. This transistor is commonly used in base stations, repeaters, and mobile radio units to provide reliable and high-quality communication links. Consult the official NEC datasheet for detailed electrical characteristics, application notes, and handling precautions before using this component in any design.

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