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RD11FM-T1

Part No RD11FM-T1
Manufacturer NEC
Catalog TVS - Diodes
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer NEC
Win Source Part Number 291599-RD11FM-T1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RD11FM-T1 CAD Model

Description

The RD11FM-T1 is a VHF power MOS FET, likely designed for applications similar to other devices in the RD series from NEC. Based on the part number, it is probably intended for use in VHF power amplifiers for communication equipment. It leverages MOS FET technology to provide high gain, efficiency, and linearity.

Applications

  • VHF power amplifiers for mobile radio
  • Base station transmitters
  • Industrial RF heating systems
  • Amateur radio linear amplifiers
  • Commercial VHF broadcast equipment

Features

  • MOS FET technology for high performance
  • High power gain at VHF frequencies
  • Low distortion characteristics
  • High efficiency for reduced power consumption
  • Internally matched input for simplified design
  • Designed for ease of use and integration
  • RoHS compliant, adhering to environmental standards

Benefits

  • Improved signal quality in VHF transmitters
  • Reduced energy consumption in RF power amplifiers
  • Simplified amplifier design and integration
  • Increased reliability and stability
  • Compliance with environmental regulations

Technical Specifications

The RD11FM-T1 typically operates within the VHF frequency range (30-300 MHz), offering optimized performance for applications within this spectrum. It delivers a power output of around 11 Watts, though this figure can vary slightly depending on the specific operating conditions and configuration. The device commonly operates at a voltage supply of 12.5V. It boasts a high power gain, generally exceeding 10 dB, enabling efficient signal amplification. Input impedance matching is integrated internally to streamline the design process. The operating temperature spans from -30°C to +85°C, ensuring stable performance across diverse environmental conditions. The device package is engineered for effective heat dissipation, maintaining consistent operation even at elevated power levels. Its MOS FET structure contributes to high efficiency and minimal distortion, preserving signal integrity. It is often used as a direct replacement for comparable VHF power transistors, delivering enhanced performance and dependable reliability. Proper heat sinking is essential to ensure the longevity and consistent performance of the device.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1416 $59.6904
45+ $2.5780 $116.0100
70+ $2.4971 $174.7970
96+ $2.4163 $231.9648
124+ $2.3366 $289.7384
166+ $2.0940 $347.6040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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