The 2SB965 is a silicon PNP epitaxial planar transistor manufactured by NEC. It is designed for use in various amplifier and switching applications. This transistor is known for its robust performance and reliability in diverse electronic circuits.

Applications

• Audio Amplifiers: Used in the amplification stages of audio equipment.
• Switching Circuits: Suitable for switching applications requiring moderate current and voltage control.
• General Purpose Amplification: Employed in various general-purpose amplification circuits.
• Power Management: Used in power supply circuits for regulation and control.

Features

• High Collector Current: Capable of handling a significant collector current.
• Low Saturation Voltage: Ensures efficient switching and reduces power loss.
• High hFE (Current Gain): Provides substantial amplification of the input signal.
• Epitaxial Planar Construction: Offers improved performance and reliability.

Benefits

• Enhanced Audio Quality: Delivers clear and amplified audio signals in audio applications.
• Efficient Switching: Enables rapid and efficient switching in various electronic circuits.
• Stable Performance: Maintains consistent performance across a range of operating conditions.
• Reliable Operation: Provides long-term reliability and durability in demanding applications.

Additional Details

The 2SB965 has a collector-base voltage (VCBO) rating of -60V, a collector-emitter voltage (VCEO) rating of -50V, and an emitter-base voltage (VEBO) rating of -5V. It can handle a collector current (IC) of -3A and a collector power dissipation (PC) of 25W. The transistor is typically available in a TO-220 package.