The RD07MVS1-T112 is a 7-watt VHF/UHF power MOS FET manufactured by Mitsubishi Electric. It's designed for high power amplification in various communication systems. This transistor utilizes MOS FET technology, offering high gain and efficiency, and is suitable for a broad range of applications.

Applications

• VHF/UHF power amplifiers
• Mobile radio equipment
• Wireless communication systems
• Amateur radio applications

Features

• High power gain: Typically 13 dB at 175 MHz
• High efficiency: Typically 60% at 175 MHz
• 7W output power
• MOS FET technology
• Surface mount package
• RoHS compliant

Benefits

• Enables high-performance VHF/UHF power amplifiers
• Reduces power consumption and heat dissipation
• Simplifies circuit design
• Provides reliable operation
• Suitable for automated assembly

Additional Details

The RD07MVS1-T112 MOS FET power transistor provides a cost-effective solution for VHF/UHF power amplification. Its high gain and efficiency contribute to reduced power consumption and improved system performance. The surface-mount package simplifies assembly and allows for compact designs. The transistor's robust construction ensures reliable operation in demanding environments.

The device is commonly used in mobile radio equipment, wireless communication systems, and amateur radio applications. Its characteristics make it suitable for both narrowband and broadband amplifier designs. The RD07MVS1-T112 provides a balance of performance, reliability, and cost-effectiveness for VHF/UHF power amplifier applications.