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Same model may have multiple batches, images only for reference.
JANTXV2N6766 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JANTXV2N6766

Part No JANTXV2N6766
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A) | MOSFET N-CH
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 90mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 115nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3
Manufacturer Package TO-204AE
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191563-JANTXV2N6766
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV2N6766 CAD Model

Description

The Microsemi Corporation MOSFET is an N-channel transistor with a maximum drain-source breakdown voltage of 200V and a continuous drain current of 30A.

  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum On-Resistance: 90mOhm @ 30A, 10V
  • Gate Charge: 115nC @ 10V
  • Package: TO-3
  • Power Dissipation: up to 4W or 150W
  • Obsolete: and has limited supply and demand status.
  • Suitable for use: in discrete semiconductor products.

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