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Same model may have multiple batches, images only for reference.
JANTX2N6756 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JANTX2N6756

Part No JANTX2N6756
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) | MOSFET N-CH TO-204AA TO-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 14A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 210mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 75W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-204AA
Manufacturer Package TO-204AA, TO-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191519-JANTX2N6756
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6756 CAD Model

Description

The Microsemi Corporation JANTX2N6756 is an N-channel MOSFET transistor designed for through-hole mounting.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A
  • Maximum On-Resistance: 210mOhm @ 14A, 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 35nC @ 10V
  • Gate-Source Voltage: ±20V
  • Power Dissipation: 4W, 75W
  • Package: TO-204AA
  • Manufacturer's Homepage: www.irf.com
  • Channel Polarity: N-Channel

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