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APT84F50B2

Name: APT84F50B2
Brand: Microsemi Corporation
SKU: 564222
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	APT84F50B2
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-Channel FREDFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Series	POWER MOS 8
Packaging	Tube
Channel Type Type	N
Technology	MOSFET
Drain Source Voltage	500V
Current - Continuous Drain (Id) @ 25°C	84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Maximum) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs	340nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	13500pF @ 25V
Vgs (Maximum)	±30V
Power Dissipation (Maximum)	1135W (Tc)
Rds On (Maximum) @ Id, Vgs	65 mOhm @ 42A, 10V
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Manufacturer Package	T-MAX [B2]
Package	TO-247-3 Variant
Win Source Part Number	1146910-APT84F50B2
Manufacturer Homepage	www.microsemi.com
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	30
Family Name	APT84F50B2
Introduction Date	May 21, 2009
ECCN	EAR99
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian APT84F50B2 CAD Model

Alternative Products

Description

The APT84F50B2 is a POWER MOS 8 series N-channel MOSFET manufactured by Microsemi Corporation.

Product Name: APT84F50B2
Manufacturer: Microsemi Corporation
Series: POWER MOS 8
Channel Type: N-channel
Maximum Power Dissipation: 1135W @ Tc
Package: TO-247-3 Variant
Mounting Style: Through-Hole
Drain-Source Voltage: 500V
Maximum Gate-Source Voltage: ±30V
Maximum Gate Charge: 340nC @ 10V
Rds On: 65 mOhm @ 42A and 10V
Drive Voltage: 10V
Continuous Drain Current: 84A @ 25°C
Application: Discrete Semiconductor Products
Operating Temperature: -55°C to 150°C (TJ)

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APT84F50B2

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