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Same model may have multiple batches, images only for reference.
APT75F50B2 Real Image
Same model may have multiple batches, images only for reference.

APT75F50B2

Part No APT75F50B2
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Datasheet
APT75F50B2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 290nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1040W (Tc)
Rds On (Maximum) @ Id, Vgs 75 mOhm @ 37A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package T-MAX [B2]
Package TO-247-3 Variant
Win Source Part Number 1146888-APT75F50B2
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT75F50B2
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT75F50B2 CAD Model

Description

The APT75F50B2 is a power MOSFET transistor from Microsemi Corporation.

  • Series: POWER MOS 8
  • Packaging: Tube
  • Supply and Demand Status: Limited
  • Alternative Parts: IXFX78N50P3, STW45NM50FD, and STW45NM50
  • Introduction Date: January 09, 2006
  • Estimated EOL Date: 2024
  • Drain Source Voltage: 500V
  • Channel Type: N
  • Gate Charge (Qg) (Maximum) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 11600pF @ 25V
  • Category: Discrete Semiconductor Products

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