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Same model may have multiple batches, images only for reference.
APT56F50L Real Image
Same model may have multiple batches, images only for reference.

APT56F50L

Part No APT56F50L
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel FREDFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 8
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 8800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 780W (Tc)
Rds On (Maximum) @ Id, Vgs 100 mOhm @ 28A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-264 [L]
Package TO-264-3, TO-264AA
Win Source Part Number 1146843-APT56F50L
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT56F50L
Introduction Date January 09, 2006
ECCN EAR99
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian APT56F50L CAD Model

Description

The Microsemi Corporation APT56F50L is a MOSFET transistor that is part of the POWER MOS 8 series manufactured by Microsemi Corporation.

  • Mounting Type: Through Hole
  • Current: 56A @ 25°C
  • Voltage Breakdown: 500V
  • Maximum Power Dissipation: 780W @ Tc
  • Package: TO-264-3, TO-264AA
  • Alternative Parts: IXTB62N50L, IXFK48N50Q, and IXFK55N50
  • Suitable for: Applications that require a MOSFET transistor with a high current and voltage breakdown

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