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Same model may have multiple batches, images only for reference.
APT40GP60BG Real Image
Same model may have multiple batches, images only for reference.

APT40GP60BG

Part No APT40GP60BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 100A 543W TO247 / Trans IGBT Chip N-CH 600V 100A 543000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
APT40GP60BG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 40A
Power - Max 543W
Switching Energy 385μJ (on), 352μJ (off)
Input Type Standard
Gate Charge 135nC
Td (on/off) @ 25°C 20ns/64ns
Test Condition 400V, 40A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
Win Source Part Number 768696-APT40GP60BG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Family Name APT40GP60BG
Introduction Date September 13, 1996
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT40GP60BG CAD Model

Description

The Microsemi Corporation APT40GP60BG is a POWER MOS 7 IGBT type transistor manufactured by Microsemi Corporation.

  • Maximum Power: 543W
  • Maximum Current: 100A
  • Voltage Breakdown: 600V
  • Vce(on): 2.7V @ 15V, 40A
  • Td (on/off) @ 25°C: 20ns/64ns
  • Gate Charge: 135nC
  • Switching Energy: 385μJ (on), 352μJ (off)
  • Package: TO-247-3
  • Mounting: Through Hole
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Family: APT40GP60BG
  • Manufacturing Location: Philippines
  • Estimated EOL Date: 2027

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