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APT30GP60BDQ1G

Part No APT30GP60BDQ1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 100A 463W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Not For New Designs
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 100A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 30A
Maximum Power Dissipation 463W
Total Switching Energy(Ets) 260μJ (on), 250μJ (off)
Input Type Standard
Gate Charge 90nC
Turn-on and Turn-off delay time 13ns/55ns
Testing Conditions 400V, 30A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 051454-APT30GP60BDQ1G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT30GP60BDQ1G CAD Model

Description

APT30GP60BDQ1G

Similar to its counterpart, the APT30GP60BDQ1G IGBT delivers high efficiency for industrial and commercial power applications. With a gate-emitter voltage rating that allows for safe and efficient operation, this transistor is suited for use in energy-efficient power modules and converter systems.

  • Applications/Projects:
    • Industrial power setups
    • Converter systems
    • Energy-efficient modules
    • Consumer electronics
  • Features and Benefits:
    • Optimized for low power loss: Maximizes energy efficiency.
    • High current capabilities: Supports demanding power requirements.
    • Durable design: Reduces failure rates.
    • Versatile packaging: Simplifies integration into existing circuits.

    Please refer to the supplied datasheet for comprehensive technical details tailored to your application needs.

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