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Same model may have multiple batches, images only for reference.
IHW30N110R3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW30N110R3

Part No IHW30N110R3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1100V 60A 333W TO247-3
Datasheet
IHW30N110R3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1100V
Maximum Current Collector 60A
Pulsed Collector Current 90A
Collector-emitter saturation voltage(Max) 1.75V @ 15V, 30A
Maximum Power Dissipation 333W
Total Switching Energy(Ets) 1.15mJ (off)
Input Type Standard
Gate Charge 180nC
Turn-on and Turn-off delay time -/350ns
Testing Conditions 600V, 30A, 15 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 068782-IHW30N110R3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW30N110R3 CAD Model

Description

The Infineon Technologies IHW30N110R3 is a Trench IGBT type semiconductor device designed for use in various applications including power supplies, motor control, and welding equipment.

  • Maximum Collector Current: 60A
  • Collector-Emitter Breakdown Voltage: 1100V
  • Maximum Power Dissipation: 333W
  • Operating Temperature Range: -40°C to 175°C (TJ)
  • Package: PG-TO247-3
  • Gate Charge: 180nC
  • Collector-Emitter Saturation Voltage: 1.75V @ 15V, 30A
  • Total Switching Energy (Ets): 1.15mJ (off)
  • Turn-On and Turn-Off Delay Time: -/350ns

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