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2SK3179

Part No 2SK3179
Manufacturer Toshiba Semiconductor and Storage
Catalog JFETs (Junction Field Effect)
Description N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) / IC FET MISC 4(2-2K1C)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 159857-2SK3179
Popularity Medium
Supply and Demand Status Balance
Family Name 2SK3179
Introduction Date September 19, 1998
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SK3179 CAD Model

Description

Overview:

The 2SK3179 is an N-channel MOSFET designed for high-speed switching applications. Known for its efficient performance and reliability, the 2SK3179 is widely utilized in power management circuits and automotive systems.

Features and Benefits:

  • High-Speed Switching: The 2SK3179 offers rapid switching capabilities, making it ideal for applications requiring fast response times.
  • Low On-State Resistance: This MOSFET features a low R<sub>DS(on), ensuring minimal losses and enhancing system efficiency.
  • Robust Design: Rugged construction enables reliable operation under harsh conditions, ensuring device longevity.

Applications:

  • Power Supplies: Utilized in DC-DC converters and other power supply units for efficient voltage conversion.
  • Automotive Systems: Commonly used in various automotive electronics for power management tasks.
  • Industrial Equipment: Suitable for industrial machines and equipment requiring efficient power control.

Additional Information:

The 2SK3179, with its high breakdown voltage and current handling capabilities, is tailored for high-power applications. Engineers often select this MOSFET for designs where both efficiency and reliability are paramount. Its compact form factor enables integration into space-constrained environments without compromising performance.

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