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APT20GF120BRG

Part No APT20GF120BRG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 32A 200W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 32A
Pulsed Collector Current 64A
Collector-emitter saturation voltage(Max) 3.2V @ 15V, 15A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 2.7mJ
Input Type Standard
Gate Charge 95nC
Turn-on and Turn-off delay time 17ns/105ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 078485-APT20GF120BRG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT20GF120BRG CAD Model

Description

APT20GF120BRG Description

The APT20GF120BRG is a high-voltage, high-speed insulated gate bipolar transistor (IGBT) with low conduction losses, making it an optimal choice for efficient power management in dynamic applications.

  • Applications: Ideal for use in industrial motor drives, uninterruptible power supplies (UPS), and power converters.
  • Features:
    • Low on-state voltage drop
    • High-speed switching
    • Compact module design
    • High current handling capability
  • Benefits:
    • Reduces power losses significantly
    • Enhances system compactness and performance
    • Reliability in high-temperature conditions
  • Additional Details: This IGBT module is engineered for minimizing switching losses and enhancing the reliability of power electronics systems. It consolidates power management tasks, increasing the overall efficiency of the system.

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