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APT100GN120B2G

Part No APT100GN120B2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 245A 960W TMAX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 245A
Pulsed Collector Current 300A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 100A
Maximum Power Dissipation 960W
Total Switching Energy(Ets) 11mJ (on), 9.5mJ (off)
Input Type Standard
Gate Charge 540nC
Turn-on and Turn-off delay time 50ns/615ns
Testing Conditions 800V, 100A, 1 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-247-3 Variant
Win Source Part Number 199250-APT100GN120B2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT100GN120B2G CAD Model

Description

APT100GN120B2G Description

The APT100GN120B2G is a versatile transistor designed for optimized thermal performance and high efficiency across various electronic applications. It offers a reliable solution for high-frequency switching tasks.

  • Voltage Rating: 1000V
  • Current Rating: 120A
  • Operating Temperature: -55°C to 150°C
  • Packaging: SOT-227

Applications

  • Renewable Energy Systems
  • Inverters
  • High-Frequency Welders
  • Induction Heating Equipment

Features and Benefits

  • Exceptional thermal performance for increased lifespan
  • High frequency switching capability
  • Low power loss to enhance overall system efficiency
  • Robust design for heavy-duty applications

Additional Details: Ideal for demanding applications, the APT100GN120B2G supports innovations in renewable energy and high-efficiency power systems.

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