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Same model may have multiple batches, images only for reference.
2N7236U Microsemi Corporation
Same model may have multiple batches, images only for reference.

2N7236U

Part No 2N7236U
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description P-CHANNEL MOSFET | MOSFET P-CH 100V SMD1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 200mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-267AB
Manufacturer Package TO-267AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124265-2N7236U
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N7236U CAD Model

Description

The Microsemi Corporation component with part number 1124265-2N7236U is an obsolete electronic component.

  • Product Category: Discrete Semiconductor Products
  • Technology: MOSFET
  • Supply and Demand Status: Limited
  • Supplier Device Package: TO-267AB
  • Maximum Power Dissipation: 4W, 125W
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 18A
  • Rds On (Maximum) @ Id, Vgs: 200mOhm @ 11A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
  • Gate Source Voltage (Maximum): ±20V

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