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Same model may have multiple batches, images only for reference.
2N6800 Real Image
Same model may have multiple batches, images only for reference.

2N6800

Part No 2N6800
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description N-CHANNEL POWER MOSFET | MOSFET N-CH 400V TO-205AF TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 400V
Id - Continuous Drain Current 3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 5.75nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW, 25W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124204-2N6800
Manufacturer Homepage www.semelab.co.uk
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6800 CAD Model

Description

The 2N6800 from Microsemi Corporation is a high-quality MOSFET transistor that is used in various electronic devices.

  • RoHS Compliant: Yes
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Power Dissipation: 800mW and 25W
  • Drain-Source Breakdown Voltage: 400V
  • Manufacturer's Homepage: www.semelab.co.uk

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