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2N4957

Part No 2N4957
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description Chip Type 2C4957 Geometry 0006 Polarity PNP | RF TRANS PNP 30V 30MA TO72
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Maximum) 30V
Noise Figure (dB Typ at f) 3.5dB at 450MHz
Gain 25dB
Maximum Power 200mW
DC Current Gain (hFE) (Minimum) at Ic, Vce 30 at 5mA, 10V
Current - Collector (Ic) (Maximum) 30mA
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-72-3 Metal Can
Supplier Device Package TO-72
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123904-2N4957
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N4957 CAD Model

Description

The Microsemi Corporation 2N4957 is a PNP transistor with a gain of 25dB. It has a maximum collector current of 30mA and a maximum collector-emitter breakdown voltage of 30V.

  • The transistor is packaged: in a TO-72-3 metal can and is designed for use in discrete semiconductor products.
  • The device has a noise figure: of 3.5dB @ 450MHz and a maximum power of 200mW.
  • It has a temperature range: of -65°C to 200°C and a DC current gain of 30 @ 5mA and 10V.
  • The device is supplied: in bulk packaging and is mounted through hole. in the open market.
  • The supply and demand status: is limited.
  • The manufacturer pack quantity: is 1 and it has an MSL level of 1 (unlimited).

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