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Same model may have multiple batches, images only for reference.
2N3499 Real Image
Same model may have multiple batches, images only for reference.

2N3499

Part No 2N3499
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description Chip Type 2C3501 Geometry 5620 Polarity NPN | TRANS NPN 100V 0.5A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) at Ib, Ic 600mV at 30mA, 300mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 1W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123731-2N3499
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N3499 CAD Model

Description

The 2N3499 is a discrete semiconductor product manufactured by Microsemi Corporation.

  • Type: NPN transistor
  • Mounting Style: through-hole
  • Supplier Device Package: TO-39 (TO-205AD)
  • Manufacturer Pack Quantity: 1
  • Maximum Collector Current: 500mA
  • Maximum Collector-Emitter Breakdown Voltage: 100V
  • Collector Cutoff Maximum: 10μA (ICBO)
  • Vce Saturation (Maximum) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 150mA, 10V
  • Maximum Power: 1W

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4559 $60.0149
26+ $4.4767 $116.3942
40+ $4.3368 $173.4720
56+ $4.1970 $235.0320
72+ $4.0570 $292.1040
96+ $3.6373 $349.1808
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Availability: 59 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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