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NAND08GAHOBZA5E

Part No NAND08GAHOBZA5E
Manufacturer Micron Technology Inc.
Catalog Custom Parts (N - R)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1221404-NAND08GAHOBZA5E
Categories Custom Parts
Manufacturer Micron Technology Inc.
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NAND08GAHOBZA5E CAD Model

Description

The NAND08GAH0BZA5E is an 8 Gigabit (1 Gigabyte) NAND flash memory device manufactured by Micron Technology. It is designed for high-density, non-volatile storage and is commonly used in applications such as solid-state drives (SSDs), USB flash drives, memory cards, and embedded systems. This device offers a balance of high storage capacity, performance, and reliability, making it suitable for various data storage needs.

Applications:

  • Solid-State Drives (SSDs): Used as the primary storage medium in SSDs for fast data access.
  • USB Flash Drives: Provides portable storage for transferring and backing up data.
  • Memory Cards: Found in SD cards and microSD cards for cameras, smartphones, and other devices.
  • Embedded Systems: Stores firmware, operating systems, and data in embedded systems.
  • Mobile Devices: Used in smartphones and tablets for storage of applications and user data.

Features:

  • High Capacity: Offers 8 Gigabit (1 Gigabyte) of storage.
  • NAND Flash Technology: Provides non-volatile storage with high endurance and data retention.
  • Fast Read/Write Speeds: Enables quick data transfer, improving system performance.
  • Compact Package: Available in a small form factor for space-constrained applications.
  • Low Power Consumption: Designed for efficient power usage, suitable for mobile and battery-powered devices.
  • Multiple Block Erase: Allows for quick erasure of large data blocks, optimizing write performance.

Benefits:

  • Large Storage Capacity: Provides ample storage for applications, data, and media files.
  • Reliable Data Storage: Ensures dependable storage with built-in error correction.
  • Fast Performance: Enables quick access to data, improving system responsiveness.
  • Space Efficiency: Compact package design saves valuable board space.
  • Energy Efficiency: Low power consumption extends battery life in portable devices.

Additional Details:

The NAND08GAH0BZA5E typically uses a multi-level cell (MLC) or triple-level cell (TLC) architecture to store multiple bits per cell, increasing storage density. It incorporates error correction code (ECC) to ensure data integrity and prolong the lifespan of the flash memory. The device operates on a standard supply voltage and is designed to withstand a wide range of operating temperatures. It supports various interface protocols, enabling easy integration with different host controllers and systems. The part number specifies the density, organization, and packaging of the NAND flash memory. Micron's NAND flash memory is widely used because of its reliability and performance characteristics making it suitable for a broad range of consumer and industrial applications.

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