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NAND01GW3B2BZA6E

Part No NAND01GW3B2BZA6E
Manufacturer Micron Technology Inc.
Catalog Memory
Description IC FLASH 1GBIT PARALLEL 63VFBGA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Micron Technology Inc.
Package Tray
Product Status Obsolete
Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 30ns
Access Time 30 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-TFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number NAND01
Standard Package 210 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0051
Win Source Part Number 646661-NAND01GW3B2BZA6E
Ultra Librarian 3D Model Ultra Librarian NAND01GW3B2BZA6E CAD Model

Description

The Micron Technology Inc. NAND01GW3B2BZA6E is a 1Gbit FLASH NAND memory chip from Micron Technology Inc. It is designed for use in electronic devices that require non-volatile memory.

  • Voltage Supply: 2.7V to 3.6V
  • Access Time: 30 ns
  • Memory Size: 1Gbit
  • Memory Organization: 128M x 8
  • Mounting Type: Surface Mountable
  • Package: 63-TFBGA
  • Operating Temperature: -40°C to 85°C
  • Memory Interface: Parallel
  • Write Cycle Time: 30ns
  • Reliability: high-performance memory chip that can be used in various electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.9180 $56.7540
7+ $15.5224 $108.6568
10+ $15.0374 $150.3740
14+ $14.5523 $203.7322
18+ $14.0672 $253.2096
24+ $12.6120 $302.6880
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