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MT53E512M64D2RR-046 WT:B

Part No MT53E512M64D2RR-046 WT:B
Manufacturer Micron Technology Inc.
Catalog DRAM
Description LPDDR4-4266 512Mx64 (32Gb)
Sample
Rohs State rohs
ECAD Module
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Category DRAM
Manufacturer Micron Technology Inc.
Win Source Part Number 1447063-MT53E512M64D2RR-046 WT:B
Package Tray
Product Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4
Memory Size 32Gbit
Memory Organization 512M x 64
Memory Interface Parallel
Clock Frequency 2.133 GHz
Write Cycle Time - Word, Page 18ns
Access Time 3.5ns
Voltage - Supply 1.06V ~ 1.17V
Operating Temperature -25°C ~ 85°C (TC)
Grade -
Mounting Type Surface Mount
Package / Case 556-BGA
Supplier Device Package 556-WFBGA
Ultra Librarian 3D Model Ultra Librarian MT53E512M64D2RR-046 WT:B CAD Model

Description

The MT53E512M64D2RR-046 WT:B by Micron is part of its esteemed LPDDR4 memory range, offering an ample 32 Gigabits (Gb) capacity with a 512 Megabit x 64 configuration. Designed for superior performance, it achieves a transfer speed of 4266 MT/s, making it an ideal choice for intensive computational tasks and ensuring smooth operation for a broad spectrum of digital devices. This module's robust architecture guarantees efficient data handling, providing a reliable solution for applications that demand high speed and large bandwidth. Additionally, its adoption of the LPDDR4 standard signifies a notable advance in lowering energy consumption, a crucial feature for mobile and wearable technologies. The WT:B designation highlights the module's design for wide temperature applications, ensuring consistent and dependable performance under varying operational conditions. Micron's focus on quality and technological innovation is reflected in the MT53E512M64D2RR-046 WT:B, making it a preferred option for manufacturers aiming to enhance the user experience through faster and more responsive devices.

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