The MT48H16M16LFBF-8AT:G is a 256Mb DDR2 SDRAM (Double Data Rate Two Synchronous Dynamic Random-Access Memory) device manufactured by Micron Technology Inc. It is organized as 16Meg x 16, making it suitable for a wide range of applications requiring high-speed memory access and moderate capacity.
Applications
- Embedded Systems
- Networking Devices
- Graphics Cards
- Printers
- Consumer Electronics
Features
- 256Mb (16Meg x 16) memory configuration
- DDR2 architecture: Provides higher bandwidth compared to DDR SDRAM
- Clock rate: Up to 133 MHz (7.5 ns cycle time)
- Double data rate operation: Transfers data on both rising and falling edges of the clock
- Four internal banks for concurrent operation
- Programmable burst length: 2, 4, 8
- Programmable CAS latency: 3, 4, 5
- On-die termination (ODT): Improves signal integrity at high speeds
- Differential clock inputs (CK and CK#)
- Lead-free construction, RoHS compliant
Benefits
- Increased bandwidth: DDR2 technology allows for faster data transfer rates, improving system performance.
- Moderate memory capacity: Provides sufficient memory for many embedded and consumer applications.
- Improved signal integrity: On-die termination reduces signal reflections and noise, ensuring reliable operation.
- Lower power consumption: DDR2 operates at a lower voltage than DDR, reducing power consumption.
- Backward compatibility: Can be used as a replacement for DDR SDRAM in some applications.
Additional Details
The MT48H16M16LFBF-8AT:G operates at a voltage of 1.8V. It is typically packaged in a FBGA (Fine-pitch Ball Grid Array) package for easy surface mounting and efficient heat dissipation. The ':G' likely denotes a specific revision or speed grade. This DDR2 SDRAM is optimized for applications requiring a balance of speed, capacity, and power efficiency.