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Same model may have multiple batches, images only for reference.
MT47H64M16NF-25E:M TR real image17578
Same model may have multiple batches, images only for reference.

MT47H64M16NF-25E:M TR

Part No MT47H64M16NF-25E:M TR
Manufacturer Micron Technology Inc.
Catalog Memory
Description IC DRAM 1GBIT PARALLEL 84FBGA / SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400 MHz 400 ps 84-FBGA (8x12.5)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Micron Technology Inc.
Package Tape & Reel (TR)
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gb (64M x 16)
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Access Time 400 ps
Voltage - Supply 1.7V ~ 1.9V
Temperature Range - Operating 0°C ~ 85°C (TC)
Mounting SMD (SMT)
Package / Case 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Base Product Number MT47H64M16
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8542.32.0032
Standard Package 2,000
Win Source Part Number 1172608-MT47H64M16NF-25E:M TR
Ultra Librarian 3D Model Ultra Librarian MT47H64M16NF-25E:M TR CAD Model

Description

The Micron Technology Inc. DDR2 SDRAM memory integrated circuit is a 1Gb (64M x 16) Volatile memory with an access time of 400 ps. Micron Technology Inc. DDR2 SDRAM is designed by Micron Technology Inc..

  • Memory Size: 1Gb (64M x 16)
  • Memory Type: Volatile DDR2 SDRAM
  • Access Time: 400 ps
  • Voltage Supply: 1.7V to 1.9V
  • Clock Frequency: 400 MHz
  • Memory Interface: Parallel
  • Memory Format: DRAM
  • Package: 84-TFBGA
  • Temperature Range: 0°C to 85°C (TC)
  • Write Cycle Time: 15ns (Word/Page)

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