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MSC017SMA120B

Part No MSC017SMA120B
Manufacturer Microchip Technology
Catalog FETs - Single
Description MOSFET SIC 1200V 17 MOHM TO-247
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202121-MSC017SMA120B
Manufacturer Microchip Technology
Category Discrete Semiconductor Products-Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Bulk
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 455W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian MSC017SMA120B CAD Model

Description

Microchip Technology MSC017SMA120B - Silicon Carbide Power MOSFET

The MSC017SMA120B is a state-of-the-art silicon carbide (SiC) MOSFET brought to you by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. This power MOSFET is designed to meet the demands of high-efficiency and high-power-density applications, making it an ideal choice for a wide range of industrial, automotive, and consumer markets.

Key Features:

  • High-Performance Silicon Carbide: The MSC017SMA120B utilizes silicon carbide technology, which offers superior switching performance and higher reliability compared to traditional silicon MOSFETs.
  • Low On-Resistance (RDS(on)): This device boasts an exceptionally low on-resistance, which significantly reduces conduction losses and enhances overall efficiency.
  • High Temperature Operation: Capable of operating at high temperatures, the MSC017SMA120B maintains performance and reliability in environments that are too harsh for standard silicon devices.
  • Fast Switching Speed: The fast switching capabilities of this MOSFET reduce switching losses, making it suitable for high-frequency power conversion systems.
  • Robust Body Diode: The device includes a robust body diode that can handle high surge currents, providing additional reliability during operation.
  • Low Capacitance: With low input and output capacitance, the MSC017SMA120B minimizes switching losses and improves the overall response time.

Applications:

The MSC017SMA120B is versatile and can be used in various applications, including:

  • Electric vehicle (EV) inverters and chargers
  • Switch-mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor drives and inverters
  • Power factor correction (PFC) circuits

Product Summary:

The MSC017SMA120B from Microchip Technology is a high-performance, 1200V, N-Channel SiC MOSFET designed for high-efficiency power conversion. With its impressive features such as low on-resistance, high-temperature operation, and fast switching speeds, it stands out as a reliable and efficient solution for advanced power conversion applications. Its robust design and capability to handle high surge currents make it a preferred choice for engineers looking to improve system performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $61.9858 $61.9858
3+ $50.8601 $152.5803
4+ $49.2707 $197.0828
5+ $47.6813 $238.4065
7+ $46.0919 $322.6433
9+ $41.3238 $371.9142
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 362 pieces
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