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JAN1N6471

Part No JAN1N6471
Manufacturer Microchip Technology
Catalog TVS - Diodes
Description TVS DIODE 12VWM 22.6VC AXIAL / 22.6V Clamp 374A (8/20µs) Ipp Tvs Diode Through Hole Axial
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Circuit Protection>TVS - Diodes
Mfr Microchip Technology
Series Military, MIL-PRF-19500/552
Package Bulk
Type Zener
Unidirectional Channels 1
Voltage - Reverse Standoff (Typ) 12V
Voltage - Breakdown (Min) 13.6V
Voltage - Clamping (Max) @ Ipp 22.6V
Current - Peak Pulse (10/1000µs) 374A (8/20µs)
Power - Peak Pulse 1500W (1.5kW)
Power Line Protection No
Applications General Purpose
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case G, Axial
Supplier Device Package Axial
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 1086-2286,1086-2286-MIL
Standard Package 1
Win Source Part Number 1179415-JAN1N6471
Ultra Librarian 3D Model Ultra Librarian JAN1N6471 CAD Model

Description

Microchip Technology JAN1N6471 Silicon Diode

The JAN1N6471 is a high-reliability silicon diode from Microchip Technology, designed to meet the stringent requirements of the aerospace and defense industries. This robust component is part of Microchip's range of radiation-hardened products, ensuring optimal performance in environments exposed to high levels of radiation.

Features and Benefits:

  • Radiation Hardened: The JAN1N6471 is specifically designed to withstand radiation effects, making it ideal for space applications and other high-radiation environments.
  • High Reliability: With its JAN (Joint Army/Navy) designation, this diode meets the military standards for reliability and performance, ensuring consistent operation even under extreme conditions.
  • Robust Voltage Range: This component is capable of handling a wide range of voltages, providing flexibility in various circuit designs and applications.
  • Low Leakage Current: The diode features a low leakage current, which is crucial for maintaining the efficiency and longevity of electronic systems.
  • Hermetically Sealed: The device is hermetically sealed, offering excellent protection against moisture and other environmental factors that could potentially damage the diode.

Applications:

  • Aerospace and Defense Systems
  • Satellites and Spacecraft
  • High-Altitude Platforms
  • Radiation-Intensive Industrial Applications

The JAN1N6471 silicon diode is a testament to Microchip Technology's commitment to producing high-quality, durable components for critical applications. Whether it's used in satellites orbiting the earth or in defense systems protecting nations, this diode offers the assurance of consistent and reliable operation. By choosing the JAN1N6471, engineers and designers can have confidence in the resilience and performance of their electronic systems, even in the most challenging environments.

For detailed specifications, application notes, and additional information, customers are encouraged to visit the official Microchip Technology website or contact their support team for personalized assistance.

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