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JAN1N5811

Part No JAN1N5811
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 150V 6A AXIAL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 39 Weeks
Features Diode Standard 150 V 6A Through Hole
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/477
Package Bulk
Speed Fast Recovery =< 500ns, > 200mA (Io)
Mounting Through Hole
Package B, Axial
Family Name 1N5811
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number 1086-2126, 1086-2126-MIL
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922269-JAN1N5811
Ultra Librarian 3D Model Ultra Librarian JAN1N5811 CAD Model

Description

Microchip Technology's JAN1N5811 Schottky Diode

The JAN1N5811 is a robust and reliable Schottky diode designed and manufactured by Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This high-quality diode is specifically engineered to meet the stringent requirements of the aerospace industry and is part of the company's extensive range of radiation-hardened products.

With its Schottky barrier design, the JAN1N5811 offers superior performance characteristics that make it an excellent choice for applications requiring fast switching and low forward voltage drop. This diode is well-suited for high-frequency operations and power supply designs, where efficiency is of the utmost importance.

Key Features of JAN1N5811:

  • Low Forward Voltage Drop: The diode's low forward voltage drop helps to minimize power loss and improve system efficiency, making it ideal for power-sensitive applications.
  • Fast Switching Speed: Its fast switching capability ensures that the diode can handle high-frequency operations with ease, which is critical for modern electronic systems.
  • High Reliability: The JAN1N5811 is constructed to meet the rigorous Joint Army/Navy (JAN) specifications, ensuring high reliability and performance even under harsh environmental conditions.
  • Radiation Hardened: Designed to withstand radiation effects, this diode is suitable for space and defense applications where exposure to radiation is a concern.
  • Hermetically Sealed: The diode comes in a hermetically sealed package, providing protection against moisture and other environmental contaminants.
  • Wide Operating Temperature Range: It can operate across a broad temperature range, ensuring stability and functionality in extreme temperatures.

Whether it's for satellite communication systems, power regulation modules, or any other application where high efficiency and reliability are essential, the JAN1N5811 from Microchip Technology stands out as a component of choice. Its compliance with military standards for electronic components guarantees that it will perform to the highest standards, delivering the quality and dependability that engineers and designers require for their most critical projects.

For detailed specifications, application notes, and additional resources, visit Microchip Technology's official website or contact their customer support team. The JAN1N5811 is more than just a diode; it's a testament to Microchip's commitment to excellence in high-reliability electronics.

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