The AT25080AN-10SI-1.8 is a high-performance, 8-Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM) device from Microchip Technology. It is designed to provide a robust storage solution for applications that require data persistence, low power consumption, and a small footprint. This device operates on a supply voltage range of 1.8V to 5.5V, making it suitable for various low-power and portable applications.
Key Features
- Memory Size: 8-Kbit (1,024 bytes) of EEPROM
- Interface Type: SPI (Serial Peripheral Interface) for high-speed data transfer
- Write Cycle Time: 5 ms maximum, providing efficient write operations
- Operating Voltage Range: 1.8V to 5.5V, accommodating a wide range of applications
- Operating Temperature Range: -40°C to +85°C, ensuring reliability across various environments
- Packaging: The device comes in an 8-lead SOIC (Narrow) package, offering a compact solution
- Data Retention: Guaranteed for 20 years at 25°C, ensuring long-term data integrity
- Endurance: 1 million write cycles per byte, providing robustness and longevity
Applications
The AT25080AN-10SI-1.8 is suitable for a wide range of applications, including:
- Portable and battery-powered devices
- Industrial and automotive control systems
- Medical devices
- Smart cards and identification systems
- Consumer electronics
Product Benefits
This EEPROM device offers a host of benefits that make it an ideal choice for designers and engineers. The low-voltage operation helps to conserve power in portable devices, while the SPI interface facilitates easy integration into existing designs. The fast write cycle time and high endurance levels ensure that the device can handle frequent data updates with ease. Furthermore, the robust data retention capabilities provide peace of mind that critical data will be preserved over an extended period.
With its combination of performance, reliability, and versatility, the AT25080AN-10SI-1.8 from Microchip Technology is an excellent choice for any application requiring a compact, high-quality non-volatile memory solution.