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APT30DQ120KG

Part No APT30DQ120KG
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GP 1.2KV 30A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Microchip Technology
Package Tube
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 30A
Voltage - Forward (Vf) (Max) @ If 3.3 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 320 ns
Current - Reverse Leakage @ Vr 100 µA @ 1200 V
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220 [K]
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number APT30DQ120
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 564039-APT30DQ120KG
Ultra Librarian 3D Model Ultra Librarian APT30DQ120KG CAD Model

Description

Microchip Technology's APT30DQ120KG: A Robust SiC Schottky Diode

The APT30DQ120KG is a state-of-the-art SiC Schottky diode engineered by Microchip Technology, a leader in semiconductor innovation. This diode is designed to offer superior performance in high-frequency and high-efficiency applications. It is a perfect fit for modern power conversion systems where efficiency and thermal performance are critical.

With a 1200V voltage rating and 30A forward current capability, the APT30DQ120KG is well-suited for a wide range of power applications. This includes but is not limited to solar inverters, switch-mode power supplies, power factor correction circuits, and motor drives. The device's ability to handle high surge currents makes it an excellent choice for applications that experience transient conditions.

One of the key features of the APT30DQ120KG is its Silicon Carbide (SiC) construction. SiC material provides superior thermal conductivity, which allows for better heat dissipation and enables the device to operate at higher temperatures than traditional silicon-based diodes. This results in increased power density and reduced cooling requirements, leading to more compact and cost-effective system designs.

The APT30DQ120KG boasts a low forward voltage drop and negligible reverse recovery charge, which translates into reduced conduction and switching losses. These characteristics help in improving overall system efficiency and reliability, making it an energy-saving solution for power conversion. Additionally, the device's zero reverse recovery current ensures minimal electromagnetic interference (EMI), crucial for sensitive electronic applications.

Microchip Technology has packaged the APT30DQ120KG in a TO-247 package, renowned for its robustness and ease of mounting. The package is designed to offer excellent electrical isolation and thermal properties, ensuring stable performance even under harsh operating conditions.

In summary, the APT30DQ120KG from Microchip Technology is an advanced SiC Schottky diode that brings together high voltage capability, high current rating, and exceptional thermal performance. Its design and material properties make it a leading choice for engineers looking to optimize their power systems for efficiency, reliability, and compactness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2598 $52.1568
38+ $2.6747 $101.6386
58+ $2.5911 $150.2838
80+ $2.5075 $200.6000
104+ $2.4239 $252.0856
139+ $2.1732 $302.0748
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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