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APT200GN60JDQ4

Part No APT200GN60JDQ4
Manufacturer Microchip Technology
Catalog IGBTs - Modules
Description IGBT MOD 600V 283A 682W ISOTOP / IGBT Module Trench Field Stop Single 600 V 283 A 682 W Chassis Mount ISOTOP®
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Manufacturer Microchip Technology
Packaging Tube
IGBT Type Trench Field Stop
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 283 A
Power - Max 682 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 14.1 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Chassis Mount
Case / Package ISOTOP
Supplier Device Package ISOTOP®
Base Product Number APT200
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number APT200GN60JDQ4MI
Standard Package 1
Win Source Part Number 1324948-APT200GN60JDQ4
Ultra Librarian 3D Model Ultra Librarian APT200GN60JDQ4 CAD Model

Description

The APT200GN60JDQ4 is a state-of-the-art insulated-gate bipolar transistor (IGBT) developed by Microchip Technology, a leader in smart, connected, and secure embedded control solutions. This high-performance IGBT is designed to deliver exceptional efficiency and power control in a variety of applications, making it a top choice for engineers and designers in the field of power electronics.

Key Features

  • Voltage and Current Ratings: With a collector-emitter voltage of 600V and a continuous collector current rating of 200A at 25°C, the APT200GN60JDQ4 is capable of handling high-power applications with ease.
  • Low On-Resistance: This IGBT features a low on-resistance, which minimizes conduction losses and improves overall efficiency in power conversion systems.
  • High Switching Speed: The device offers high-speed switching capabilities, which is essential for reducing switching losses and is beneficial for high-frequency operations.
  • Robust Design: The APT200GN60JDQ4 is engineered to withstand harsh operating conditions, making it suitable for industrial and automotive applications where reliability is critical.
  • Co-Packaged with Diode: This IGBT comes co-packaged with a free-wheeling diode, which provides protection against voltage spikes and enhances the performance during switching events.

Applications

The versatile nature of the APT200GN60JDQ4 IGBT allows it to be used in a diverse range of applications, including:

  • Inverters and converters for renewable energy systems such as solar and wind power.
  • Electric vehicle (EV) powertrains, including traction inverters and onboard chargers.
  • Uninterruptible power supplies (UPS) for critical power backup systems.
  • High-performance motor drives and industrial automation systems.
  • Power management solutions for data centers and telecommunication infrastructure.

Quality and Reliability

Microchip Technology is committed to providing products that meet the highest standards of quality and reliability. The APT200GN60JDQ4 is no exception, with rigorous testing and quality control measures in place to ensure consistent performance and durability. Whether you're designing for efficiency, power density, or ruggedness, this IGBT is engineered to exceed your expectations and deliver unparalleled performance.

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