Microchip Technology 25LC080BT-I/SN Serial EEPROM

The 25LC080BT-I/SN is a high-quality 8 Kbit serial Electrically Erasable Programmable Read-Only Memory (EEPROM) device from Microchip Technology. It is part of the renowned 25 Series EEPROMs that provide efficient non-volatile memory storage. This particular model is designed for a wide range of applications, making it a versatile choice for designers looking to implement reliable data storage in their systems.

This EEPROM operates over a broad voltage range (2.5V to 5.5V), making it suitable for various low-power and standard applications. It is capable of high-speed SPI-compatible serial bus timing, with a maximum clock frequency of 10 MHz, allowing for fast data transfer rates that are essential for performance-critical applications.

The 25LC080BT-I/SN comes in an 8-pin SOIC (SN) package, which is widely accepted in the industry and suitable for surface-mount technology (SMT). Its small form factor is ideal for space-constrained applications, yet it offers ample storage for configuration parameters, calibration data, and small application logs.

Key features of the 25LC080BT-I/SN include:

• Memory Size: 8 Kbits (1,024 x 8)
• Operating Voltage Range: 2.5V to 5.5V
• Communication Interface: SPI (Serial Peripheral Interface)
• Max Clock Frequency: 10 MHz
• Temperature Range: Industrial (-40°C to +85°C)
• Write Cycle Time: 5 ms (max)
• Endurance: 1 million erase/write cycles
• Data Retention: 100 years

Additionally, the device supports the Page Write operation, which allows up to 16 bytes of data to be written in a single cycle, improving write efficiency for larger data buffers. The 25LC080BT-I/SN also features a hardware write-protect pin that can be used to prevent accidental data changes, providing an additional layer of security for critical data storage.

Overall, the 25LC080BT-I/SN from Microchip Technology is a reliable and flexible EEPROM solution that offers durability and ease of integration, making it a top choice for designers and engineers in various fields.