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1N6621US

Part No 1N6621US
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 440V 1.2A A-MELF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Microchip Technology
Package Bulk
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 440 V
Current - Average Rectified (Io) 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Supplier Device Package A-MELF
Operating Temperature - Junction -65°C ~ 150°C
Base Product Number 1N6621
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 847031-1N6621US
Ultra Librarian 3D Model Ultra Librarian 1N6621US CAD Model

Description

The 1N6621US is a high-reliability, controlled avalanche silicon rectifier diode crafted by the renowned Microchip Technology. This diode is specifically designed to cater to the stringent requirements of the aerospace and defense industries, where performance and durability are of the utmost importance.

Key Features

  • High Surge Capability: This diode is capable of withstanding significant surge currents, making it ideal for applications that experience transient overvoltage conditions.
  • Controlled Avalanche Characteristics: Engineered for applications requiring energy absorption capability, the diode ensures safe operation during overvoltage events.
  • Low Leakage Current: Exhibits minimal leakage current, thereby providing high reliability and power efficiency in sensitive circuits.
  • Hermetically Sealed: The diode comes in a hermetic package, ensuring protection against environmental conditions such as moisture and dust, which is critical for aerospace and military applications.
  • Operating Temperature Range: With an operating temperature range from -65°C to +175°C, the 1N6621US is built to perform reliably in extreme temperature environments.

Applications

The robust design and specifications of the 1N6621US make it suitable for a variety of high-demand applications, including:

  • Power supply circuits in satellites and space vehicles
  • Military and aerospace avionics
  • High-reliability commercial systems
  • Pulse and power circuits in communication systems
  • Environmental and stress-sensitive instrumentation

Quality and Reliability

Microchip Technology is committed to delivering products that meet the highest standards of quality and reliability. The 1N6621US diode is no exception, and it comes with the assurance of rigorous testing and certification to ensure performance under the most demanding conditions.

For detailed specifications, application notes, and additional information regarding the 1N6621US rectifier diode, customers are encouraged to visit the official Microchip Technology website or contact their support team.

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