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MSS30-B53-E45 Real Image1 MSS30-B53-E45 Real Image2
Same model may have multiple batches, images only for reference.
MSS30-B53-E45 Real Image1 MSS30-B53-E45 Real Image2
MSS30-B53-E45 Real Image1 MSS30-B53-E45 Real Image2
Same model may have multiple batches, images only for reference.

MSS30-B53-E45

Part No MSS30-B53-E45
Manufacturer M/A-Com Technology Solutions
Catalog RF Diodes
Description COM, SCHOTTKY-BEAMLEAD-PKG E45-1 / RF Diode Schottky - 1 Bridge 3V 50 mA 100 mW E45
Datasheet
MSS30-B53-E45 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes>RF Diodes
Mfr M/A-Com Technology Solutions
Series MSS30-xxx-x
Package Tray
Diode Type Schottky - 1 Bridge
Voltage - Peak Reverse (Max) 3V
Current - Max 50 mA
Capacitance @ Vr, F 0.33pF @ 0V, 1MHz
Resistance @ If, F -
Power Dissipation (Max) 100 mW
Temperature Range - Operating -65°C ~ 150°C
Package / Case E45
Supplier Device Package E45
Base Product Number MSS30
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 25 pcs
Win Source Part Number 1382972-MSS30-B53-E45
Ultra Librarian 3D Model Ultra Librarian MSS30-B53-E45 CAD Model

Description

The MSS30-B53-E45 is a RF diode designed for use in discrete semiconductor products.

  • Diode Type: Schottky
  • Maximum Peak Reverse Voltage: 3V
  • Maximum Forward Current: 50 mA
  • Power Dissipation: 100 mW
  • Temperature Range: -65°C to 150°C
  • Package: Tray
  • Moisture Sensitivity Level: 1, meaning it can withstand unlimited exposure to moisture without any adverse effects.
  • This RF diode is ideal for use in applications that require high-frequency signal processing, such as RF amplifiers, mixers, and detectors.

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