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Same model may have multiple batches, images only for reference.
NGB8207BNT4G Littelfuse Inc.
Same model may have multiple batches, images only for reference.

NGB8207BNT4G

Part No NGB8207BNT4G
Manufacturer Littelfuse Inc.
Catalog IGBTs - Single
Description IGBT 365V 20A 165W D2PAK3
Datasheet
NGB8207BNT4G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Littelfuse Inc.
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 365V
Maximum Current Collector 20A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 2.6V @ 4V, 20A
Maximum Power Dissipation 165W
Input Type Logic
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1082974-NGB8207BNT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGB8207BNT4G CAD Model

Description

The Littelfuse Inc. NGB8207BNT4G is a high-performance IGBT transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 365V
  • Maximum Current Collector: 20A
  • Maximum Power Dissipation: 165W
  • Pulsed Collector Current: 50A
  • Application: Logic input
  • Collector-Emitter Saturation Voltage: 2.6V @ 4V, 20A
  • Package: D2PAK
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand: Balanced

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