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Same model may have multiple batches, images only for reference.
NGB18N40ACLBT4G Real Image
Same model may have multiple batches, images only for reference.

NGB18N40ACLBT4G

Part No NGB18N40ACLBT4G
Manufacturer Littelfuse Inc.
Catalog IGBTs - Single
Description IGBT 430V 18A 115W D2PAK3
Datasheet
NGB18N40ACLBT4G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Littelfuse Inc.
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 430V
Maximum Current Collector 18A
Pulsed Collector Current 50A
Collector-emitter saturation voltage(Max) 2.5V @ 4V, 15A
Maximum Power Dissipation 115W
Input Type Logic
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1082962-NGB18N40ACLBT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGB18N40ACLBT4G CAD Model

Description

The Littelfuse Inc. NGB18N40ACLBT4G is a surface mount insulated gate bipolar transistor (IGBT) with a collector-emitter breakdown voltage of 430V and a maximum collector current of 18A.

  • Maximum Power Dissipation: 115W
  • Mounting: SMD (SMT) technology
  • Collector-Emitter Saturation Voltage (Max): 2.5V @ 4V, 15A
  • Component Status: Active
  • Popularity: Medium
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
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120+ $0.9755 $117.0600
185+ $0.9450 $174.8250
255+ $0.9145 $233.1975
330+ $0.8840 $291.7200
440+ $0.7926 $348.7440
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